Introduction of deep level impurities, S, Se, and Zn, into Si wafers for high-temperature operation of a Si qubit

To realize high-temperature operation of Si qubits, deep impurity levels with large confinement energy, which are hardly thermally excited, have been introduced into wafers. Group II Zn and group VI impurities S Se, known to form levels, were the substrates by ion implantation. These samples analyzed for concentration-depth profiles, energy level depths, absence defects. introduce thin channels such as 50-nm-thick Si, we found introduction conditions so that concentration depth profiles maximum value at less than 50 nm from surface. Then, formation defects experimentally examined. By using wafer obtained experiments, single-electron transport room temperature, qubit, room-temperature quantum magnetic sensors promising.